193-nm DUV laser generated by cascaded LBO crystals. Credit: H. Xuan (GBA branch of Aerospace Information Research Institute, Chinese Academy of Sciences), edited

Researchers developed a 60-milliwatt solid-state DUV laser at 193 nm using LBO crystals, setting new benchmarks in efficiency values.

In the realm of science and technology, harnessing coherent light sources in the deep ultraviolet (DUV) region holds immense significance across various applications such as lithography, defect inspection, metrology, and spectroscopy. Traditionally, high-power 193-nanometer (nm) lasers have been pivotal in lithography, forming an integral part of systems used for precise patterning. However, the coherence limitations associated with conventional ArF excimer lasers hinder their effectiveness in applications requiring high-resolution patterns, like interference lithography.

Hybrid ArF Excimer Laser Technology

Enter the concept of the “hybrid ArF excimer laser.” Integrating a narrow linewidth solid-state 193-nm laser seed in place of the ArF oscillator achieves enhanced coherence alongside narrow linewidth, thus enabling improved performance in high-throughput interference lithography. This innovation not only boosts pattern precision but also accelerates lithography speed.

Moreover, the hybrid ArF excimer laser’s heightened SciTechDaily